尊龙集团有限公司

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
 PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density，having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform；
2. 650V breakdown voltage,Ic=160A@Tc=100℃；
3. Low conduction loss,low switching loss；
4. Copacked with Very?soft,fast?recovery?antiparallel?diode；
SPECIFICATION

DGQ160N65CTS2A

Related new products

DFN1608 Package ESD Protection Device

Three-phase Rectifier Module N0/N1 Product

NP – sealed MOSFET for cooling fan

1200V 40mΩ SiC MOSFET

SOD-323FL Small Package Rectifier Diode

1200V 80 mΩ SIC MOSFET

N150V MOSFET for Industrial Control

TOLL N100V MOSFETs for Industrial

IGBT low loss series

LFPAK56D MOSFET for Automotive
网站地图